采用自成靶工艺，研制了SNT‐DT／25型密封氘氚中子管，对其工作温度、使用寿命、功耗、中子产额及其稳定性等性能参数进行了测试。结果表明：中子管使用温度可达175℃，最高中子产额≥1×109 n／s ，中子产额浮动≤10％；在靶极电压－80 kV、阳极电流300μA、靶流80μA的工作条件下，中子产额可达1×108 n／s ，中子管的性能指标完全满足中子测井使用要求。此外，本文还对中子产额随靶极电压、阳极电流的影响进行了分析。

The SNT‐DT/25 type neutron tube was developed by drive‐in target technolo‐gy .Focused on the strict advices for well‐logging neutron tube ,the important parame‐ters ,such as neutron yield ,stability ,life span ,were investigated on the special plat‐form for neutron tube annealing .The results suggested that the operating temperature w as as high as 175 ℃ ,the limit yield reached up to 109 n/s ,the neutron yield changed less than 10% ,and the neutron yield could reach to 1 × 108 n/s with acceleration voltage-80 kV and the anode current of 300 μA .Besides , the effect of target voltage and anodic current with neutron yield was analyzed .

以中子诱发235U裂变产生的135Xe的累积产额数据为例,利用了所有可利用的实验数据,介绍了裂变产物产额数据的评价方法,包括数据的收集、修正、评价、误差调整和数据处理,特别是协方差数据的评价、半经验模型理论计算数据的应用和相关数据的处理,给出了135Xe热能点产额的推荐值以及0～20 MeV产额-能量关系曲线。

Takeing 135 Xe produced by neutron induced fission of 235 U as an example, the evaluation method for fission yield was introduced using the all experimental data available. The evaluation procedure in- cludes the experimental data collection, correction, evaluation, error assessment and data analysis. The study of the uncertainty covariance, application of semi-empirical theoretical calculation and the yield ener- gy-dependence of 135Xe in the incident energy range 0~20 MeV were emphasized in this work.

随着微电子产业的不断发展,刻蚀特征尺度达到纳米级,等离子体刻蚀工艺过程机理研究越来越受到重视.刻蚀表面仿真是研究离子刻蚀特性的重要方法.在离子刻蚀表面仿真中,离子刻蚀产额模型是研究刻蚀机理的重要模型,也是元胞自动机等仿真方法的重要基础.为了解决利用传统方法无法得到准确刻蚀产额模型参数的问题,本文提出一种基于刻蚀速率匹配的离子刻蚀产额优化建模方法,该方法以实际刻蚀速率与模拟刻蚀速率之间的均方差为优化目标,利用基于分解的多目标进化算法来优化离子的刻蚀产额模型参数,并将得到的刻蚀产额模型参数应用到采用元胞方法的刻蚀工艺的实际仿真过程中.实验结果表明了该刻蚀产额优化建模方法的有效性.

With the constant development of the microelectronics industry, the etching scale has come up to nanoscale, which makes the plasma etching mechanism attract more and more attention. The profile surface simulation is one of the most significant technologies for the study of ion etching. In the process of ion etching surface simulation, the ion etching yield model serves as an important model for the study of etching mechanism as well as the basic foundation of some simulations such as cellular automata. In order to solve the problem that it is difficult to achieve accurate parameters of etching yield model by adopting the traditional method, the paper proposes an optimization method for ion etching yield modeling based on etching velocity matching. Aiming at reducing the mean square error between the simulated etching velocity and the real etching velocity, it optimizes the parameters of ion etching yield modeling by using the decomposition-based multi-object evolution algorithm, which

测定了动能为400~600keV的Xe29+离子入射Au靶产生Au的M-X射线谱,获得了射线产额与离子入射动能的实验关系.从两体碰撞过程的能量与角动量守恒出发,推导出了低能Xe29+离子与Au原子碰撞过程中Au M-X射线产额与离子动能的理论关系.结果表明,在该能量范围内,射线产额的理论值与实验结果符合得较好.

According to the conservation of energy and angular momentum in the process of two body collision , the theoretical relations of Au M X-ray yields with kinetic energy of ion are deduced ,following the impact of low energy Xe29 + ions on Au target . Au M X-ray emission following the impact of Xe29 + ions of 400 ~ 600 keV kinetic energies on Au target has been detected , and the experimental relations of the X-ray yields with kinetic energy of ions are also obtained . The results show that the theoretical value has a good agreement with the experimental data in the energy range .

本文通过对7种材质（ C、Al、Fe、Cu、Ag、W、Pb）电极片在1．25 MeV入射光子束作用下的电子发射产额进行模拟计算，研究了厚度和材质对阵列电离室电极片电子发射产额的影响关系。研究结果表明：阵列电离室电极片在辐射光子作用下的电子发射产额在电极片厚度较厚时（特别是大于0．01 mm时），随着电极片厚度或电子密度的增大而明显减小。另外，电极片长度的选取需要结合电极的材质适当考虑。

In this paper, by carrying out MCNP simulations on the electron emission yield induced by 1.25 MeV ( rays from electrodes of C, Al, Fe, Cu, Ag, W, Pb in array ionization chamber models, we studied the influ-ence of the electrodes''thickness and material on their gamma ray induced electron emission yields.The calcu-lated results show that, with the increase of the thickness ( over 0.01 mm) and the electron density of the elec-trodes, the yields of the emitted electrons from the array ionization chamber''s electrodes decrease apparently, and that the length of the electrodes should be selected with due consideration of the electrodes''material.