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双语推荐:荧光薄膜

采用高阻本征GaN薄膜,通过H3PO4刻蚀和SiOxNy薄膜钝化方法对GaN薄膜进行表面态调控,研究了表面态调控对GaN薄膜光致荧光光谱的影响.研究发现,H3PO4刻蚀对改善GaN薄膜的紫外荧光发射作用不大,但显著增加可见荧光的强度;经SiOxNy薄膜表面钝化的GaN紫外荧光量子效率增加12—13倍,同时对可见荧光有明显增加.通过比较H3PO4刻蚀和SiOxNy薄膜钝化的室温和低温荧光光谱,探讨了表面态调控对GaN紫外荧光、蓝带荧光和黄带荧光的影响及相关物理机理.
Hot phosphor acid (H3PO4) etching and/or SiOxNy surface passivation are used to change the surface states of high-resistance intrinsic GaN films. The films are investigated to reveal the influence of controlled surface states on photoluminescence (PL) emission. It is found that H3PO4 etching cannot improve the ultraviolet (UV) PL emission obviously, but the PL spectrum in the range of visible light is considerably enhanced. After passivation with SiOxNy film, the quantum e?ciency of UV PL is increased by a factor of 12–13. Meanwhile, the visible PL is significantly enhanced. By analyzing the PL spectra of the etched and passivated samples obtained at room temperature and low temperatures, we discuss the role of surface states in PL emission in the range of UV, blue and yellow bands, and the related physical mechanisms.

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在光敏面上镀制荧光薄膜将紫外光转变为可见光,是提高CCD和CMOS图像传感器紫外响应灵敏度的一种有效方法。针对荧光薄膜入射界面的散射和反射损耗降低荧光发光强度的分析,研究在荧光薄膜上镀制增透膜和阻隔膜的灵敏度增强特性。采用真空热阻蒸发的镀膜方法分别制备了单层Lumogen荧光薄膜和MgF2/Lumogen复合膜。利用原子力显微镜,紫外可见近红外分光光度计,荧光光谱仪对两种样品的表面粗糙度,漫反射和透射光谱以及荧光发光光谱分别进行对比测试分析。结果表明:MgF2保护层降低了表面粗糙度,减小了入射界面的漫反射损耗,对500~700nm的可见波段具有明显增透作用,也增强了Lumogen薄膜对紫外波段受激发射的荧光强度;同时,MgF2薄膜的抗损伤及水汽隔离性能对荧光薄膜紫外响应能力具有保护作用,为延长紫外CCD薄膜及器件的工作寿命提供了有效手段。
A low cost and less complicated expansion approach of wavelength responses with a Lumogen phosphor coating was adopted ,as they increased the quantum efficiency of CCD and CMOS detectors in ultra-violet by absorbing UV light and then re-emitting visible light .In this paper ,the sensitivity enhancement of fluorescence coatings was studied by adding an anti-reflection film or barrier film to reduce the loss of the scattering and reflection on the incident interface .The Lumogen and MgF2/Lumogen film were deposited on quartz glasses by physical vacuum deposition .The surface morphology ,transmittance spectrum ,reflec-tance spectrum and fluorescence emission spectrum were obtained by atomic force microscope (AFM ) ,spectrophotometer and fluorescence spectrometer ,respectively .The results indicated that MgF2 film had obvious positive effect on reducing scattering and reflection loss in 500~700 nm ,and enhancing the absorption of Lumogen coating in ultraviolet spectrum .Meanwhile ,the fluo

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利用飞秒瞬态吸收光谱和基于飞秒荧光上转换技术的飞秒时间分辨荧光动力学对T4有机染料敏化的Al2O3薄膜和TiO2薄膜中的激发态过程进行了研究。对这两种敏化薄膜中的荧光动力学进行了多指数拟合。所得到T4染料敏化TiO2薄膜中的电子注入效率为93%。此外,通过静态非均匀电子耦合模型拟合,得到T4敏化TiO2薄膜中的电子转移速率为1.17 ps-1。
Excited-state processes in T4 organic dye-sensitized Al2 O3 and TiO2 films were studied by femtosecond transient absorption spectroscopy and femtosecond time-resolved photoluminescence dynam-ics based on up-conversion method. By multiexponential analysis, we obtained the electron injection effi-ciency of 93% in T4 dye-sensitized TiO2 film. In addition, we further got the electron injection rate of 1. 17 ps-1 in the T4 dye-sensitized TiO2 film by a static inhomogeneous electronic coupling model.

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CIGS薄膜的结晶相是制备高质量薄膜的关键问题.本文采用共蒸发“三步法”工艺沉积Gu(In, Ga)Se2(CIGS)薄膜,通过X射线衍射仪(XRD)和X射线荧光光谱仪(XRF)、扫描电镜(SEM)结合的方法详细研究了“三步法”工艺的相变过程,并制备出转换效率超过15%的CIGS薄膜太阳电池.
The Cu(In, Ga)Se2 (CIGS) phase transformation during the“three-stage”evaporation is the key problem for obtaining high-quality absorber. Cu(In, Ga)Se2 (CIGS) thin film has been prepared via co-evaporation“three-stage process”. The phase transformation was studied by means of XRD, XRF (X-ray fluoroscopy) and SEM. And the efficiency above 15%of CIGS film solar cell was obtained succossfully.

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采用熔融挤出加工方法将稀土荧光粉与聚碳酸酯( PC)树脂混合造粒,用开炼机制成荧光PC薄膜。应用XRD、SEM、荧光光谱等仪器对荧光粉及荧光PC薄膜结构与性能进行了表征;将荧光PC薄膜与蓝光LED芯片组合,用光谱仪测量白光LED的光色性能等参数。结果表明,稀土荧光粉与PC树脂相容性较好,荧光粉在树脂中分散均匀;大颗粒、晶型完整的荧光粉在加工时有利于保持结构及晶体形貌的稳定;加工前后荧光粉激发-发射波长基本保持不变;同时,荧光粉粒径对白光LED光效影响较大,随着合成白光中蓝光和黄光相对比例增大,得到的白光显色指数逐渐上升。
A rare-earth phosphor powder filled polycarbonate ( PC) resin was prepared by melt-extrusion method and rolled into a fluorescent PC film by open mill.X-ray diffraction, scanning electron microscope and fluorescence spectroscopy was applied to characterize the structure and performance of the phosphor powder and the fluorescent PC film.The fluorescent PC film was combined with the blue LED chip and its color and luster properties were measured by optical spectrometer.The results showed that the rare-earth phosphor powder filled PC resin exhibited good compatibility between rare-earth phosphor powder and PC resin.The phosphor powder could uniformity dis-persed in the PC resin.The rare-earth phosphor powder with larger size crystal was conducive to maintain a stable crystal structure and morphology in the processing.The excitation-emission wavelength of the phosphor could be re-mained after processing.However, the optical efficiency of the white LED was significantly influenced

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晕苯是一种用于真空紫外光致发光重要的下转换材料。本文研究旋涂法和热蒸发法制备紫外CCD用晕苯薄膜的工艺方法,并对所制备的两种薄膜的性能进行了表征和对比。测试结果表明:旋涂方式成膜工艺简单,材料利用率较高,并且保持了荧光材料本身固有的晶体结构,但是膜面粗糙度较大;热蒸发方式成膜后紫外吸收较强,荧光发射强度相对较高,成膜后膜面粗糙度较小;热蒸发工艺在加热过程中改变了晕苯的晶体结构并形成了新的结晶态;相比于旋涂法,热蒸发的整个制备工艺相对复杂,并且生产成本较高。此外,该对比性研究工作为实现不同要求(如荧光发射强度、表面粗糙度、生产成本等)的荧光下转换薄膜的制备提供了理论指导。
In the present paper ,the methods of spin-coating and physical vapor deposition (PVD) were researched to prepare the coronene film for UV-CCD ,and their properties were characterized and compared with each other .The results of the experiment show that the process of spin-coating is relatively simple ,which takes advantage of materials and retains the inherent crystal structure of coronene .However ,the roughness of the film is a little more than that of PVD method ;the film prepared by PVD method can absorb ultraviolet more effectively and then emits fluorescence with more intensity .Compared with the method of spin-coating ,the surface of PVD film is more smoothly ,and the process of thermal evaporation changes the crystal structure of coronene and forms another new crystalline state according to the XRD graph .While the whole process of PVD is more complex and it needs larger cost of production than spin-coating method .Besides ,the comparison research work provided theoretical di-r

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采用溶胶-凝胶法在Si(100)衬底上生长了K与N共掺的ZnO薄膜,并用X射线衍射仪、扫描电子显微镜、荧光分光光度计、紫外-可见分光光度计对ZnO薄膜样品的结构和光学特性进行了研究。结果表明,溶胶-凝胶法制备的ZnO薄膜为六方纤锌矿结构。随着K掺杂浓度的增大,薄膜的结晶性变好,组成薄膜的颗粒变大,并表现出c轴择优生长特性,同时掺杂导致的氧空位缺陷也在增加,使得绿光发射增强,薄膜的光学带隙先增后减。
The K-N co-doped ZnO films were prepared on Si(100)substrates by sol-gel method.The structure and the optical properties of the ZnO films were investigated by X-ray diffraction,scanning electron microsco-py,photoluminescence and ultraviolet and visible spectrophotometer.The results show that the films exhibit a hexagonal structure.As the concentration of potassium increases,the crystallinity of the films was improved and the grain size increases,showing a preferential growth along c axis.Meanwhile,the increased concentration of K-N doping results in increased oxygen vacancies,enhanced green photoluminescence,and the optical band-gap that increases first and then decreases.

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采用MOCVD方法在 AlN/蓝宝石模板上生长高铝组分 Al0.6 Ga0.4 N 薄膜,并采用高分辨率XRD(HRXRD)及阴极荧光(CL)方法对其进行了表征.结果表明,AlGaN薄膜产生了相分离,其原因为厚膜中的应力弛豫及Al原子低的表面迁移率.
In this work ,Al0.6Ga0.4N films grown on AlN/sapphire templates by metalorganic chemical va-por deposition (MOCVD) system were characterized by high resolution XRD and low temperature cath-odoluminescence (CL ) methods .It’s found that there exists phase separation phenomenon in the films by XRD measurements .The optical properties obtained from CL spectra confirmed this phenomenon further . The generation of phase separation is attributed to stress relaxation in thick films and the low surface mob-ility of Al atoms .

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对具有明显聚集诱导发光性能(AIE)的化合物4,4′-双(2,2′-双(4-(6-(9H-咔唑基)己氧基)苯基)乙烯基)联苯( p2bc6)以电化学聚合法制备了聚合物发光薄膜。该聚合薄膜的结构、光学性能和表面形貌通过红外光谱、紫外光谱( UV)、荧光光谱和原子力显微镜表征。结果表明:聚合前体通过分子中咔唑基团聚合形成聚合物薄膜薄膜具有良好的发光性质;制得的电化学聚合薄膜表面平整,表面粗糙度可达到3 nm以下,有望作为发光材料应用于PLED器件中。
A compound ( p2bc6) which shows a significant aggregation-induced emission phenomenon was used to make polymers by electrochemical polymerization.The structures, optical performance and surface morphology of the electrochemical polymerized films were characterized by means of infrared spectroscopy, near ultra violet( UV) , photoluminescence measurements and atomic force microscopy.The results showed that the electrochemical poly-merization proceeded from carbazole groups, the film emitted fluorescence and had flat surface which the root mean square ( rms) of surface roughnesses was less than 3 nm.It is suggested that they are potential materials for fabrica-tion in PLED devices.

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(1)以型号316不锈钢金属板为研究对象,对薄膜法X射线荧光光谱测量中,样品检测位置的选择进行研究,确定了最佳的样品检测位置为样品距离X射线管和探测器水平基线1 cm处,并且与X射线管和探测器水平基线成16°角度。(2)以工业环境空气重金属污染物Pb ,Cd ,Cr为主要分析对象,在有铅板防护情况下进行薄膜法X射线荧光光谱测量研究,发现X射线会穿透样品薄膜而继续激发防护铅板,使得滤膜背景光谱中有较强的铅谱线干扰,会对实际样品中铅元素的测量产生影响。在薄样和防护铅板之间加上一层隔离材料,可有效避免防护铅板中铅谱线对样品测量产生的干扰。(3)以型号316不锈钢、黄铜、铝材、紫铜和聚四氟乙烯几种硬质隔离材料作为铅板内衬材料进行选择研究,结果表明:紫铜的X射线荧光光谱中所含元素的谱线最少,谱图中没有出现重金属Cr ,Cd ,Pb的谱峰,并且能量较高部分靶材散射光谱强度较弱,对实际样品中重金属元素Cr ,Cd和Pb的测量不会产生干扰,作为铅板的内衬金属材料可以避免防护铅板中铅元素谱线的干扰,是最佳的薄膜法X射线荧光光谱分析中铅板的内衬金属材料。该研究为组装及搭建便携式大气及水体重金属X射线荧光光谱分析仪提供了重要的理论依据。
(1) In this paper type 316 stainless steel metal plate as the research object ,the selection of sample detecting position was studied when thin film method X-ray fluorescence measurement was conducted .The study showed that the optimal location for the sample detection was sample distance X-ray tube and detector baseline 1cm with the baseline into a 16°angle .(2) Heavy metal pollutants of Pb ,Cd and Cr in industrial ambient air as the main analysis object ,when thin film method X-ray fluorescence conducted with lead plate protection ,X-rays will penetrate the membrane and continuely stimulate the protective lead plate . Therefore there is lead spectral line interference in the filter membrane background spectrum ,which will affect the detection of lead element in real samples .Studies show that when a layer of isolating material was applied between the thin sample and the protective lead plate ,the interference of lead line can effectively be avoided .(3) Several rigid insul

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