对大功率半导体激光器驱动电源仿真研究时,需要建立体现大功率半导体激光器电气特性的等效负载模型,目前的LD(Laser Diode)电路模型由于缺乏寄生参数而不适用.本文根据大功率半导体激光器的测试数据,通过分析改进LD的速率方程,建立了包含寄生参数的大功率半导体激光器等效电路模型.仿真结果表明:该等效电路模型的V-I曲线和P-I曲线与厂家给出的曲线一致,可以作为仿真大功率半导体激光驱动电源的等效负载.

For simulating high-power semiconductor laser driver ,it is necessary to build an equivalent load model .Due to lacks of parasitic parameters ,the existing circuit model of laser diode (LD ) is insufficient of simulating high-power semiconductor laser .Based on test data of high-power semiconductor laser ,by means of analyzing and improving rate equation of LD ,an equivalent circuit model w as built including sparasitic pa-rameters .Simulation results show that the V-I curve and P-I curve of equivalent circuit model are consistent with the manufacture’s ,so it can be used as the equivalent load of high-power semiconductor laser driver .

本文的主要工作以数字式大功率半导体激光器驱动电源设计展开，主要是实现能够给半导体激光器提供最大输出40A、输出电压在2V~10V的恒流源。基于驱动电源的技术要求，设计了驱动电路主回路、保护电路、温控单元等数字式大功率半导体激光器驱动电源的主要部分。

The digital Semiconductor Laser’s Driving Source is designed in this paper, in order to gain a constant current source, which the maximize output electric current is 40A, voltage is from 2V to 10V. based on the requirements of the very task, major circuits of Driving Source are designed ,including:major loop、protective circuits、temperature control circuit and the single chip management unit.

光泵浦半导体垂直外腔面发射激光器(OPS-VECSEL)是一种新型的半导体激光器,在很多领域有着广阔的应用前景.其外腔结构更容易实现高功率、高光束质量的倍频.本文分析了光泵浦垂直外腔面发射半导体激光器的器件结构;研究了VECSEL的倍频,设计了两种不同的VECSEL倍频结构及散热装置.

The optically pumped semiconductor vertical external cavity surface emitting laser(OPS-VECSEL)is a new type of semiconductor laser,and it has broad application prospects in many fields.The outer cavity structure is easier to achieve high power and high beam quality octave.We analyzed its device structure and the multiplier of VECSEL,then we designed two different VECSEL multiplier structure and cooling devices.

半导体抽运碱金属蒸气激光器(DPAL)需大功率窄线宽泵浦源,但市售半导体激光器输出线宽远远大于碱金属原子吸收谱宽,难以实现有效泵浦,因此需采用Littrow外腔法压窄半导体激光器输出谱宽。Littrow外腔系统中元件参数的选择直接影响大功率半导体激光器输出谱宽。为此文中沿入射光线方向构建外腔压窄模型,利用球面镜替代柱面镜,分析了微柱透镜阵列、光学系统和光栅元件对外腔输出谱宽的影响,模拟结果为微柱透镜阵列焦距越小、光栅刻线越密、球面镜焦距越大,外腔输出谱宽越窄,实验结果符合理论模型。

High power narrowed linewidth pump source is needed with diode pumped alkali laser developed. But the linewidth of the commercial diode laser is far exceed the absorption linewidth of the alkali atom. So the Littrow external cavity is used to narrowed the spectrum of high power diode laser array. The linewidth of high power diode laser array is directly affected by the parameters of elements in Littrow external cavity. In this paper, the model of external cavity diode laser was set up by using ray tracing method. By replacing cylindrical lens with sphere lens, the influence of micro-cylindrical lens array, beam shaping optics and grating were analysed. The resutls show that, to obtain narrower output laser linewidth, the focal length of micro-cylindrical lens array should be smaller, the grating grooves is denser, and the focal of spherical lens is larger. And the theoretical conclusions is demonstrated by experimental results.

对基于模糊PID控制的半导体激光器温度控制系统进行了研究,通过Matlab/Simulink对其进行了仿真,并将其与基于PID控制的半导体激光器温度控制系统进行了对比。仿真结果表明,模糊PID控制的超调量在15%内,响应更快。

The research on the semiconductor laser temperature control system based on fuzzy PID control was conducted, the simulation model based on Matlab/Simulink, was carried out and hereby, PID control simulation system was compared. Results show that the PID control system has its super adjustment value being within 15%, and responses fast.